Sensors 2007, 7, 1-x manuscripts

In this paper we present a novel, quadruple well process developed in a modern 0.18 m CMOS technology called INMAPS. On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening of N-wells from the Pdoped epitaxial layer. This prevents the collection of radiation-induced charge by unrelated Nwells, typically ones where PMOS transistors are integrated. The design of a sensor specifically tailored to a particle physics experiment is presented, where each 50 m pixel has over 150  Present address: Institut Pluridisciplinaire Hubert Curien, 23 rue du loess BP28, 67037 Strasbourg, France  Present address: Faculty of Electrical Engineering, University of Belgrade, Bulevar kralja Aleksandra 73, 11120 Belgrade,